Portal de Periódicos da CAPES

Amphoteric Phosphorus Doping for Stable p‐Type ZnO

2007; Volume: 19; Issue: 20 Linguagem: Inglês

10.1002/adma.200700083

1521-4095

A. Allenic, Wei Guo, Y. B. Chen, Michael B. Katz, G. Zhao, Yong Che, Zhendong Hu, B. Liu, Shengbai Zhang, Xiaoqing Pan,

Copper-based nanomaterials and applications

The role of dislocations in stable p-type phosphorus-doped ZnO epitaxial films is investigated. It is shown that good p-type conductivity is always associated with a considerable increase in the density of dislocations, which can aid the formation of shallow complex acceptors and provide sinks for native donors.