Fabrication and characteristics of GaAs-AlGaAs tunable laser diodes with DBR and phase-control sections integrated by compositional disordering of a quantum well
1991; IEEE Photonics Society; Volume: 27; Issue: 6 Linguagem: Inglês
10.1109/3.89984
ISSN1558-1713
AutoresT. Hirata, Minoru Maëda, M. Suehiro, H. Hosomatsu,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoGaAs-AlGaAs rib-waveguide graded-index separate-confinement heterostructure (GRINSCH) single-quantum-well (SQW) tunable distributed Bragg reflector (DBR) laser diodes were fabricated by EB lithography, ion implantation, and two-step metalorganic vapor phase epitaxy (MOVPE) growth. Active and passive waveguides were monolithically integrated by the compositional disordering of quantum-well heterostructures using silicon ion implantation. First-order gratings and rib waveguides were adopted with EB lithography to improve lasing characteristics, and they have wide application to photonic integrated circuits (PICs). Waveguide losses of partially disordered GRINSCH-SQW passive waveguides were as low as 4.4 cm/sup -1/ at the lasing wavelength. A narrow linewidth as low as 560 kHz and a frequency tuning of more than 2.9 THz were obtained. The results show that this fabrication process is useful for PICs. >
Referência(s)