Fabrication of high open‐circuit voltage a‐Si 1– x O x :H solar cells by using p‐a‐Si 1– x O x :H as window layer
2011; Wiley; Volume: 8; Issue: 10 Linguagem: Inglês
10.1002/pssc.201001145
ISSN1862-6351
AutoresSorapong Inthisang, Taweewat Krajangsang, Ihsanul Afdi Yunaz, Akira Yamada, Makoto Konagai, C. R. Wroński,
Tópico(s)Silicon and Solar Cell Technologies
ResumoAbstract We have deposited p‐type hydrogenated amorphous silicon oxide (p‐a‐Si 1‐x O x :H) by 13.56 MHz radio frequency plasma enhanced chemical vapor deposition (RF‐PECVD) using a gas mixture of silane (SiH 4 ), hydrogen (H 2 ), carbon dioxide (CO 2 ) and diborane (B 2 H 6 ). Optical and electrical characterization showed that high quality wide optical band‐gap ( E opt ) p‐a‐Si 1‐x O x :H films could be achieved by using low doping concentration and high H 2 dilution. We also fabricated a‐Si 1‐x O x :H single‐junction p‐i‐n solar cells by using p‐a‐Si 1‐x O x :H and intrinsic a‐Si 1‐x O x :H as window and absorber layer, respectively. These solar cells exhibited open circuit voltages of over 1.05 V and good short‐circuit currents as well as fill factors (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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