Transparent ZnO-Based Ohmic Contact to p-GaN
2001; Cambridge University Press; Volume: 693; Linguagem: Inglês
10.1557/proc-693-i13.1.1
ISSN1946-4274
AutoresE. Kamińska, A. Piotrowska, K. Gołaszewska, M. Guziewicz, R. Kruszka, A. Kudła, Tomasz J. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, Marcin Zieliński, Jacek B. Jasiński, Z. Liliental‐Weber,
Tópico(s)Ga2O3 and related materials
ResumoAbstract Highly conductive ZnO films were fabricated on p-GaN in a two-step process. First, zinc was thermally evaporated on p-GaN. Next, zinc film was oxidized in oxygen flow. To increase the conductivity of ZnO, nitrogen was introduced into zinc during its deposition. The above procedure proved successful in fabricating ZnO of the resistivity of ~1x10 -3 Ωcm and resulted in ohmic contacts of resistivity ~1x10 -2 Ωcm 2 to low-doped p-GaN, and light transmittance of ~75% in the wavelength range of 400-700 nm.
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