Artigo Revisado por pares

Oxidation Behavior of Silicon Yttrium Oxynitride

1992; Wiley; Volume: 75; Issue: 12 Linguagem: Inglês

10.1111/j.1151-2916.1992.tb04423.x

ISSN

1551-2916

Autores

J.-B. Veyret, Marcel Van de Voorde, M. de Billy,

Tópico(s)

MXene and MAX Phase Materials

Resumo

The oxidation behavior of the silicon yttrium oxynitride Y 10 Si 7 O 23 N 4 , so‐called H‐phase, in the temperature range 700–1400°C has been investigated. A nitrogen retention phenomenon in the oxidation product Y 4.67 (SiO 4 ) 3 O (O‐apatite) is discussed. The H‐phase is one of the four quaternary compounds identified in hot‐pressed Si 3 N 4 materials fabricated within the Si 3 N 4 –SiO 2 –Y 2 O 3 pseudoternary system.

Referência(s)