Oxidation Behavior of Silicon Yttrium Oxynitride
1992; Wiley; Volume: 75; Issue: 12 Linguagem: Inglês
10.1111/j.1151-2916.1992.tb04423.x
ISSN1551-2916
AutoresJ.-B. Veyret, Marcel Van de Voorde, M. de Billy,
Tópico(s)MXene and MAX Phase Materials
ResumoThe oxidation behavior of the silicon yttrium oxynitride Y 10 Si 7 O 23 N 4 , so‐called H‐phase, in the temperature range 700–1400°C has been investigated. A nitrogen retention phenomenon in the oxidation product Y 4.67 (SiO 4 ) 3 O (O‐apatite) is discussed. The H‐phase is one of the four quaternary compounds identified in hot‐pressed Si 3 N 4 materials fabricated within the Si 3 N 4 –SiO 2 –Y 2 O 3 pseudoternary system.
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