Ultrafast hot electron relaxation time anomaly in InN epitaxial films
2007; American Institute of Physics; Volume: 90; Issue: 25 Linguagem: Inglês
10.1063/1.2751110
ISSN1520-8842
AutoresTsong-Ru Tsai, Chih-Fu Chang, Shangjr Gwo,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoUltrafast carrier dynamics in InN epitaxial films was investigated by using femtosecond time-resolved pump-probe reflectivity measurements with a photon energy of 1.58eV. The hot electron relaxation time decreased with increasing electron density (n), measuring at n−0.5. The result was contradictory to what was expected from the hot phonon effect and the screening effect. The authors attributed this result to the important role played by electron-electron scattering in hot electron relaxation.
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