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Emitter—Base—Collector self-aligned heterojunction bipolar transistors using wet etching process

1986; Institute of Electrical and Electronics Engineers; Volume: 7; Issue: 12 Linguagem: Inglês

10.1109/edl.1986.26523

1558-0563

Kazuo Eda, Masanori Inada, Y. Ota, A. Nakagawa, Takashi Hirose, Manabu Yanagihara,

Semiconductor Quantum Structures and Devices

The first emitter-base-collector (EBC) self-aligned (SA) heterojunction bipolar transistors (HBT's) using wet etching process are described. This self-alignment fabrication technique is extremely simple but can get excellent high-frequency performance. An HBT with a 4-µm-wide emitter mesa showed 18 GHz of F t and 13 GHz of F_{\max} . By optimizing this process, high-frequency operation above 40 GHz can be expected.