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Silylation Using a Supercritical Carbon Dioxide Medium to Repair Plasma-Damaged Porous Organosilicate Films

2004; Electrochemical Society; Volume: 7; Issue: 12 Linguagem: Inglês

10.1149/1.1819876

1944-8775

Bashar Lahlouh, Jorge Lubguban, Gangadharan Sivaraman, Robert W. Gale, S. Gangopadhyay,

Diamond and Carbon-based Materials Research

Supercritical was used to facilitate silylation in repairing oxygen plasma-induced damage during photoresist stripping in porous organosilicate films. Samples with open and closed-pore morphologies prepared by sacrificial-porogen approach were exposed to plasma to simulate damage. These samples were pretreated with 10% butanol in (wt/wt) and were silylated with 10% trimethylchlorosilane in (wt/wt). The results showed that this technique was effective in repairing plasma damage in films with open-pore morphology but was less effective in closed-pore films. However, the surface hydrophobicity for both films was recovered after treatment. © 2004 The Electrochemical Society. All rights reserved.