CIGSSe thin film PV modules: from fundamental investigations to advanced performance and stability
2004; Elsevier BV; Volume: 451-452; Linguagem: Inglês
10.1016/j.tsf.2003.10.160
ISSN1879-2731
AutoresJ. Palm, V. Probst, W. Stetter, R. Toelle, S. Visbeck, H. Calwer, T. P. Niesen, Helmut Vogt, Olivier Hernandez, M. Wendl, F. Karg,
Tópico(s)Copper-based nanomaterials and applications
ResumoA process for high efficiency large area Cu(In,Ga)(Se,S)2 (CIGSSe) thin film solar modules is developed applying rapid thermal processing and controlled sodium doping. Continuous optimization aims at sufficient process maturity for a successful transfer into cost-effective mass production. The pilot line yields aperture area efficiencies of 11% (average) for 30×30 cm2 modules and a certified champion efficiency of 13.1% for the first 60×90 cm2 demonstrator module (unencapsulated). First Cd-free 30×30 cm2 circuits yield up to 11.9% efficiency applying CBD-Zn(S,OH)-buffer layers. Investigations on the absorber formation by structural, compositional and electrical characterization will be given. Models for the Ga and S distribution will be discussed and experimentally verified. A favorable double band gap grading structure is accomplished by controlled sulfur profiling and by a process induced gallium accumulation towards the back electrode. The stability of the frameless low-cost packaged pilot line modules against humidity is confirmed externally by passing the damp heat test sequence according to IEC 61646.
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