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P-205L: Late-News Poster: Comparison between a-InGaZnO and a-InHfZnO TFTs in Perspective of Subgap Density of States (DOS) in Active Film

2010; Wiley; Volume: 41; Issue: 1 Linguagem: Inglês

10.1889/1.3499961

2168-0159

Sangwon Lee, Sung‐Chul Kim, Yong Woo Jeon, Dong Myong Kim, Dae Hwan Kima, Je‐Hun Lee, Byung Du Ahn, Sei Yong Park, Jun‐Hyun Park, Joo Han Kim, Jae‐Woo Park,

Silicon Nanostructures and Photoluminescence

Abstract The extraction of acceptor‐like subgap DOS (g A (E)) in a‐InGaZnO and a‐InHfZnO TFTs is demonstrated by using multi‐frequency C‐ V technique. The DC performance and negative bias stress (NBS)‐ induced instability are compared in perspective of g A (E). The superior stability of a‐InHfZnO TFT is deduced to be originated from donor‐like DOS g D (E).