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A Practical, Self‐Catalytic, Atomic Layer Deposition of Silicon Dioxide

2008; Wiley; Volume: 47; Issue: 33 Linguagem: Inglês

10.1002/anie.200800245

1521-3773

Julien Bachmann, Robert Zierold, Yuen Tung Chong, Roland Hauert, Chris Sturm, Rüdiger Schmidt‐Grund, B. Rheinländer, Marius Grundmann, U. Gösele, Kornelius Nielsch,

Diamond and Carbon-based Materials Research

Molecular self-attack: According to mythology, a scorpion may sting itself to death; similarly, 3-aminopropyltriethoxysilane catalyzes its own hydrolysis in the atomic layer deposition (ALD) of SiO2 thin films and nanostructures. Between 120 and 200 °C, the growth rate is constant at 0.06 nm per ALD cycle. The SiO2 films are chemically and optically pure. SiO2 nanotubes of aspect ratio 500 exhibit smooth walls of accurately controlled thickness. Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2002/2008/z800245_s.pdf or from the author. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.