Catalytic metal-gate field effect transistors based on SiC for indoor air quality control
2015; Copernicus Publications; Volume: 4; Issue: 1 Linguagem: Inglês
10.5194/jsss-4-1-2015
ISSN2194-878X
AutoresDonatella Puglisi, Jens Eriksson, Christian Bur, Andreas Schuetze, Anita Lloyd Spetz, Mike Andersson,
Tópico(s)Water Quality Monitoring and Analysis
ResumoAbstract. High-temperature iridium-gated field effect transistors based on silicon carbide have been used for sensitive detection of specific volatile organic compounds (VOCs) in concentrations of health concern, for indoor air quality monitoring and control. Formaldehyde, naphthalene, and benzene were studied as hazardous VOCs at parts per billion (ppb) down to sub-ppb levels. The sensor performance and characteristics were investigated at a constant temperature of 330 °C and at different levels of relative humidity up to 60%, showing good stability and repeatability of the sensor response, and excellent detection limits in the sub-ppb range.
Referência(s)