Anodic etching of SiC in alkaline solutions
2007; IOP Publishing; Volume: 17; Issue: 4 Linguagem: Inglês
10.1088/0960-1317/17/4/s04
ISSN1361-6439
AutoresDennis H. van Dorp, J.L. Weyher, J. J. Kelly,
Tópico(s)Thin-Film Transistor Technologies
ResumoThe photoelectrochemistry of silicon carbide in alkaline solution was investigated with a view to wet-chemical etching applications. Anodic dissolution and passivation of the p-type semiconductor was observed in the dark; illumination with supra-bandgap light was required for oxidation of the n-type electrode. At low KOH concentrations and low light intensities, diffusion-controlled etching is observed for n-type SiC. We show that open-circuit photoetching can be used for defect revealing. Furthermore, based on the electrochemical properties of silicon carbide and silicon, we expect various material-selective etching processes to be possible.
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