Selective low‐temperature chemical vapor deposition of copper from (hexafluoroacetylacetonato)copper(I)trimethylphosphine, (hfa)CuP(Me) 3
1991; Volume: 3; Issue: 5 Linguagem: Inglês
10.1002/adma.19910030506
ISSN1521-4095
AutoresToivo T. Kodas, Hyung Kyu Shin, Kai‐Ming Chi, Mark J. Hampden‐Smith, J.D. Farr, Mark Paffett,
Tópico(s)Force Microscopy Techniques and Applications
ResumoCommunication: The deposition of smooth, dense, fine‐grained, low resistivity copper films has been achieved at temperatures as low as 150°C from an organometallic precursor. It is suggested that the films (see figure) are formed as the result of thermal disproportionation of the precursor without decomposition of the ligand. Substrate‐selective deposition at rates of over 1000 Åμmin is demonstrated. magnified image
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