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Electrical Properties of Self-Assembled Branched InAs Nanowire Junctions

2008; American Chemical Society; Volume: 8; Issue: 4 Linguagem: Inglês

10.1021/nl073193y

1530-6992

Dmitry Suyatin, Jie Sun, Andreas Fuhrer, Daniel Wallin, Linus Fröberg, Lisa Karlsson, Ivan Maximov, Reine Wallenberg, Lars Samuelson, H. Q. Xu,

Semiconductor materials and devices

We investigate electrical properties of self-assembled branched InAs nanowires. The branched nanowires are catalytically grown using chemical beam epitaxy, and three-terminal nanoelectronic devices are fabricated from the branched nanowires using electron-beam lithography. We demonstrate that, in difference from conventional macroscopic junctions, the fabricated self-assembled nanowire junction devices exhibit tunable nonlinear electrical characteristics and a signature of ballistic electron transport. As an example of applications, we demonstrate that the self-assembled three-terminal nanowire junctions can be used to implement the functions of frequency mixing, multiplication, and phase-difference detection of input electrical signals at room temperature. Our results suggest a wide range of potential applications of branched semiconductor nanostructures in nanoelectronics.