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Environmentally Stable Transparent Organic/Oxide Hybrid Transistor Based on an Oxide Semiconductor and a Polyimide Gate Insulator

2010; Institute of Electrical and Electronics Engineers; Volume: 31; Issue: 5 Linguagem: Inglês

10.1109/led.2010.2043334

1558-0563

Shinhyuk Yang, Jeong-Ik Lee, Sang‐Hee Ko Park, Woo‐Seok Cheong, Doo‐Hee Cho, Sung Min Yoon, Chun‐Won Byun, Chi-Sun Hwang, Hye‐Yong Chu, Kyoung-Ik Cho, Taek Ahn, Yoojeong Choi, Mi Hye Yi, Jin Jang,

Advanced Memory and Neural Computing

We fabricated environmentally stable and transparent organic/oxide hybrid transistor on a glass substrate using the conventional photolithography. The obtained device, which was composed of an In-Ga-Zn-O active layer/soluble polyimide (KSPI) organic insulator, showed a mobility of 6.65 cm 2 /Vs, a subthreshold swing slope of 350 mV/decade, a threshold voltage ( VT ) of 3.10 V, and an on-off ratio of 3.9 × 10 9 . The transistor also showed good uniformity characteristics and was found to be environmentally stable for 90 days under ambient conditions.