Fabrication and modeling of high-frequency PZT composite thick film membrance resonators
2004; Institute of Electrical and Electronics Engineers; Volume: 51; Issue: 10 Linguagem: Inglês
10.1109/tuffc.2004.1350953
ISSN2373-7840
AutoresF.F.C. Duval, Robert Dorey, R.W. Wright, Z. Huang, R. W. Whatmore,
Tópico(s)Advanced Sensor and Energy Harvesting Materials
ResumoHigh-frequency, thickness mode resonators were fabricated using a 7 microm piezoelectric transducer (PZT) thick film that was produced using a modified composite ceramic sol-gel process. Initial studies dealt with the integration of the PZT thick film onto the substrate. Zirconium oxide (ZrO2) was selected as a diffusion barrier layer and gave good results when used in conjunction with silicon oxide (SiO2) as an etch stop layer. Using these conditions, devices were produced and the acoustic properties measured and modeled. The resonators showed a resonant frequency of about 200 MHz, an effective electromechanical coupling coefficient of 0.34, and a Q factor of 22. Modeling was based on a Mason-type model that gave good agreement between the experimental data and the simulations. The latter showed, for the PZT thick film, an electromechanical coupling coefficient of 0.35, a stiffness of 8.65 x 10(10) N x m(-2) and an e33,f piezoelectric coefficient of 9 C x m(-2).
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