Single photon emission from SiV centres in diamond produced by ion implantation
2005; IOP Publishing; Volume: 39; Issue: 1 Linguagem: Inglês
10.1088/0953-4075/39/1/005
ISSN1361-6455
AutoresChunlang Wang, Christian Kurtsiefer, Harald Weinfurter, B. Burchard,
Tópico(s)Advanced Fiber Laser Technologies
ResumoWe report the observation of single photon emission from single SiV (silicon-vacancy) centres in diamond produced by ion implantation. The high photostability and the narrow emission bandwidth of about 5 nm at room temperature make SiV centres interesting as a single photon source in practical quantum cryptography. We discuss problems that arise from the nonradiaditve transitions which lower the brightness of the source.
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