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The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications

2009; Institute of Electrical and Electronics Engineers; Volume: 44; Issue: 5 Linguagem: Inglês

10.1109/jssc.2009.2015821

1558-173X

A.J. Scholten, G.D.J. Smit, Bart A. De Vries, L.F. Tiemeijer, J.A. Croon, D.B.M. Klaassen, R. van Langevelde, Xin Li, Weimin Wu, G. Gildenblat,

Semiconductor materials and devices

The surface-potential-based compact MOS model PSP is reviewed with special emphasis to features of interest to analog and RF designers. Various aspects of the model are discussed, such as Gummel symmetry, capacitance reciprocity at V DS = 0 V, parasitic resistances, junction modeling, distortion modeling, and noise modeling. Examples from circuit design are used to illustrate the benefits of the PSP model.