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Terahertz imaging with GaAs field-effect transistors

2008; Institution of Engineering and Technology; Volume: 44; Issue: 6 Linguagem: Inglês

10.1049/el

ISSN

1350-911X

Autores

Alvydas Lisauskas, Wolff von Spiegel, Stephane Boubanga-Tombet, A. El Fatimy, D. Coquillat, F. Teppe, Nina Dyakonova, W. Knap, Hartmut G. Roskos,

Tópico(s)

Spectroscopy and Laser Applications

Resumo

Imaging at 0.6 THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operated at room temperature. The results allow the assessment of the potential of future antenna-fitted HEMT arrays for real-time imaging.

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