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Electrically pumped hybrid evanescent Si/InGaAsP lasers

2009; Optica Publishing Group; Volume: 34; Issue: 9 Linguagem: Inglês

10.1364/ol.34.001345

1539-4794

Xiankai Sun, Avi Zadok, Michael J. Shearn, Kenneth Diest, A. Ghaffari, Harry A. Atwater, Axel Scherer, Amnon Yariv,

Nanowire Synthesis and Applications

Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing InGaAsP as the III-V gain material for the first time to our knowledge. The lasing threshold current of 300-mum-long devices was as low as 24 mA, with a maximal single facet output power of 4.2 mW at 15 degrees C. Longer devices achieved a maximal single facet output power as high as 12.7 mW, a single facet slope efficiency of 8.4%, and a lasing threshold current density of 1 kA/cm2. Continuous wave laser operation was obtained up to 45 degrees C. The threshold current density, output power, and efficiency obtained improve upon those of previously reported devices having a similar geometry. Facet images indicate that the output light is largely confined to the Si waveguide.