High Performance n-Type Carbon Nanotube Field-Effect Transistors with Chemically Doped Contacts
2005; American Chemical Society; Volume: 5; Issue: 2 Linguagem: Inglês
10.1021/nl047931j
ISSN1530-6992
AutoresAli Javey, Ryan Tu, Damon B. Farmer, Jing Guo, Roy G. Gordon, Hongjie Dai,
Tópico(s)Nanowire Synthesis and Applications
ResumoShort channel (~80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-k gate dielectrics (ALD HfO2) are obtained. For nanotubes with diameter ~ 1.6 nm and bandgap ~ 0.55 eV, we obtain n-MOSFET-like devices exhibiting high on-currents due to chemically suppressed Schottky barriers at the contacts, subthreshold swing of 70mV/decade, negligible ambipolar conduction and high on/off ratios up to 10^6 at a bias voltage of 0.5V. The results compare favorably with the state-of-the-art silicon n-MOSFETs and demonstrate the potential of SWNTs for future complementary electronics. The effects of doping level on the electrical characteristics of the nanotube devices are discussed.
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