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On a GaN-Based Light-Emitting Diode With an Indium–Tin–Oxide (ITO) Direct-Ohmic Contact Structure

2011; Institute of Electrical and Electronics Engineers; Volume: 23; Issue: 15 Linguagem: Inglês

10.1109/lpt.2011.2150210

1941-0174

Yi-Jung Liu, Chien‐Chang Huang, Tai-You Chen, Chi-Shiang Hsu, Tsung-Yuan Tsai, Wen-Chau Liu,

Metal and Thin Film Mechanics

A GaN-based light-emitting diode (LED) with a direct-Ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and Au thermal-diffused and removed layer, is studied. By depositing an Au metallic film on the Mg-doped GaN layer followed by thermal annealing and removed processes, an ITO direct-Ohmic contact at p-GaN/ITO interface is formed. An enhanced light output power of 18.0% is also found at this condition. This is mainly attributed to the larger and more uniform light-emission area resulted from the improved current spreading capability by the use of an ITO direct-Ohmic contact structure.