A novel planarized, silicon trench sidewall oxide-merged p-i-n Schottky (TSOX-MPS) rectifier
1999; Institute of Electrical and Electronics Engineers; Volume: 20; Issue: 12 Linguagem: Inglês
10.1109/55.806106
ISSN1558-0563
AutoresR.N. Gupta, Wan-Ki Min, T. Paul Chow,
Tópico(s)Advancements in Semiconductor Devices and Circuit Design
ResumoA new high-voltage rectifier structure, a planarized silicon Trench Sidewall OXide Merged P-i-n Schottky (TSOX-MPS) rectifier is described. This TSOX-MPS rectifier exhibits a far superior switching performance, compared to the p-i-n rectifier, for the same reverse leakage current and on-state voltage. In addition, for the same lifetime, the reverse leakage current of the TSOX-MPS rectifier is equal to that of the p-i-n rectifier, not so much sensitive than the MPS rectifier does. These aspects of the TSOX-MPS rectifier have been experimentally verified, by fabrication of 400 V TSOX-MPS rectifiers.
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