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Charge separation techniques for irradiated pseudo-MOS SOI transistors

2003; Institute of Electrical and Electronics Engineers; Volume: 50; Issue: 6 Linguagem: Inglês

10.1109/tns.2003.821380

1558-1578

B. Jun, Daniel M. Fleetwood, Ronald D. Schrimpf, X. J. Zhou, Enrique Montes, S. Cristoloveanu,

Semiconductor materials and devices

Pseudo-metal-oxide-semiconductor (MOS) silicon-on-insulator (SOI) transistors are used to study the total ionizing dose response of buried oxides. The concentrations of radiation-induced oxide-trap and interface-trap charge are separated using midgap and dual-transistor charge separation analysis techniques. Dual-transistor analysis is shown to be especially well suited for charge separation of pseudo-MOSFETs (/spl Psi/-MOSFETs) because the electron conduction mode of this simple point-contact device resembles an nMOS transistor, and the hole conduction mode resembles a pMOS transistor. That this is a single device ensures that the dual-transistor assumption of equal oxide-trap charge in otherwise identical n and pMOS transistors is satisfied automatically. Both electron and hole conduction current-voltage (I-V) traces must extrapolate to a common, physically realistic midgap voltage; this is employed as a test for the self-consistency of /spl Psi/-MOSFET data. Charge separation performed using midgap and dual-transistor analyses show good agreement for the devices employed in this paper.