Adaptive mesh refinement for multilayer process simulation using the finite element method
1992; Institute of Electrical and Electronics Engineers; Volume: 11; Issue: 3 Linguagem: Inglês
10.1109/43.124426
ISSN1937-4151
AutoresB. Baccus, Dominique Collard, Emmanuel Dubois,
Tópico(s)Advanced Numerical Methods in Computational Mathematics
ResumoAn adaptive mesh refinement technique is proposed for a two-dimensional finite-element multilayer process simulator. Mesh refinement is based on the dopant concentration ratio inside each element, together with a prediction technique, minimizing the interpolation errors. A significant reduction in CPU time is obtained by automatic grid refresh. Several methods were tested. The mesh adequacy is evaluated with bipolar test structures using analytical punch-through voltage calculations. Applications of these methods are presented in two ways. First, an advanced trench-isolated polysilicon bipolar transistor was simulated to show the general possibilities of the techniques, and second, a coupled process and device simulation approach allows the evaluation of the scheme on real structures in relation to experimental measurements. >
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