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Room-temperature photo-pumped operation of 1.58-μm vertical-cavity lasers fabricated on Si substrates using wafer bonding

1996; Institute of Electrical and Electronics Engineers; Volume: 8; Issue: 11 Linguagem: Inglês

10.1109/68.541538

1941-0174

Hiroshi Wada, Takeshi Takamori, T. Kamijoh,

Advanced Fiber Optic Sensors

Long-wavelength vertical cavity lasers have been successfully fabricated on Si substrates using direct wafer bonding. InGaAs-InGaAsP multiquantum-well active layers with 40.5-pair InGaAsP-InP stacked mirrors have been directly bonded on 3.5-pair Al 2 O 3 /a-Si mirrors deposited on Si substrates. The sample has been optically pumped at room temperature and lasing operation at 1.58-μm has been achieved.