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High-temperature CVD for crystalline-silicon thin-film solar cells

1999; Institute of Electrical and Electronics Engineers; Volume: 46; Issue: 10 Linguagem: Inglês

10.1109/16.791995

1557-9646

Ф. Фаллер, A. Hurrle,

Semiconductor materials and devices

The fundamentals of thermal CVD for the deposition of silicon at high temperatures are briefly discussed and applied to the conditions in the CVD system that we have constructed and characterized. Our system fulfils basic requirements to be met for solar cell application; solar cells made from epitaxial layers on various substrates were fabricated. The high-quality cells achieved 17.6% efficiency proving the excellent performance of our system, the cells on economically relevant substrates achieved 8% efficiency which still needs improvement.