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Formation and in situ dynamics of metallic nanoblisters in Ga + implanted GaN nanowires

2005; IOP Publishing; Volume: 16; Issue: 12 Linguagem: Inglês

10.1088/0957-4484/16/12/003

1361-6528

Anindya Datta, Sandip Dhara, Shunsuke Muto, Chih‐Wei Hsu, Chaowen Wu, C. H. Shen, T. Tanabe, Tadashi Maruyama, Kuei‐Hsien Chen, Li‐Chyong Chen, Yuh‐Lin Wang,

GaN-based semiconductor devices and materials

The formation of voids and bubbles in the energetic ion implantation process is an important issue in material science research, involving swelling induced embrittlement of materials in nuclear reactors, catalytic activities in the nanopores of the bubble, etc. We report here the formation and in situ dynamics of metallic nanoblisters in GaN nanowires under self-ion implantation using a Ga+ focused ion beam. High-resolution transmission electron microscopes equipped with electron energy loss spectroscopy and energy filtering are used to identify the constituents of the blister. In situ monitoring, with focused ion beam imaging, revealed the translation and rotation dynamics of the blisters.