Spin-Hall-assisted magnetic random access memory
2014; American Institute of Physics; Volume: 104; Issue: 1 Linguagem: Inglês
10.1063/1.4858465
ISSN1520-8842
AutoresA. van den Brink, Stefan Cosemans, S. Cornelissen, Mauricio Manfrini, Adrien Vaysset, W. Van Roy, Tai Min, H. J. M. Swagten, B. Koopmans,
Tópico(s)Advanced Memory and Neural Computing
ResumoWe propose a write scheme for perpendicular spin-transfer torque magnetoresistive random-access memory that significantly reduces the required tunnel current density and write energy. A sub-nanosecond in-plane polarized spin current pulse is generated using the spin-Hall effect, disturbing the stable magnetic state. Subsequent switching using out-of-plane polarized spin current becomes highly efficient. Through evaluation of the Landau-Lifshitz-Gilbert equation, we quantitatively assess the viability of this write scheme for a wide range of system parameters. A typical example shows an eight-fold reduction in tunnel current density, corresponding to a fifty-fold reduction in write energy, while maintaining a 1 ns write time.
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