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Pi-Gate SOI MOSFET

2001; Institute of Electrical and Electronics Engineers; Volume: 22; Issue: 8 Linguagem: Inglês

10.1109/55.936358

1558-0563

Jong‐Tae Park, J.-P. Colinge, C.H. Diaz,

Silicon Carbide Semiconductor Technologies

This paper describes computer simulations of various SOI MOSFETs with double and triple gate structures, as well as gate-all-around devices. The concept of a triple-gate device with sidewalls extending into the buried oxide (hereby called a "/spl Pi/-gate" or "Pi-gate" MOSFET) is introduced, The proposed device is simple to manufacture and offers electrical characteristics similar to the much harder to fabricate gate-all-around MOSFET.