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Si and SiGe millimeter-wave integrated circuits

1998; IEEE Microwave Theory and Techniques Society; Volume: 46; Issue: 5 Linguagem: Inglês

10.1109/22.668668

1557-9670

P. Russer,

Photonic and Optical Devices

Monolithic integrated millimeter-wave circuits based on silicon and SiGe are emerging as an attractive option in the field of millimeter-wave communications and millimeter-wave sensors. The combination of active devices with passive planar structures, including also antenna elements, allows single-chip realizations of complete millimeter-wave front-ends. This paper reviews the state-of-the-art silicon- and SiGe-based monolithic integrated millimeter-wave circuits. The technological background as well as active and nonlinear devices and passive circuit structures suitable for silicon- and SiGe-based monolithic integrated millimeter-wave circuits are discussed. Examples of such integrated circuits and first systems applications are also presented.