28.1: AMOLED using CW laser Crystallized Polycrystalline Silicon Thin-Film Transistor
2006; Wiley; Volume: 37; Issue: 1 Linguagem: Inglês
10.1889/1.2433210
ISSN2168-0159
AutoresYong‐Duck Son, Kyung-Dong Yang, Nam‐Kil Son, Seong-Man Hong, Kyu-Chang Park, Dong‐Joon Choo, Jin Jang, Woo‐Jin Nam, Jae‐Hoon Lee, Min‐Koo Han, Myung‐Hwan Oh,
Tópico(s)Silicon and Solar Cell Technologies
ResumoWe have developed a 2.2-inch QQVGA AMOLED display using CW laser crystallized (CLC) poly-Si backplane. By using CW laser, the a-Si on glass could be crystallized into one dimensional single crystalline silicon as a result of sequential lateral crystallization (SLC) region. The SLC region was used as an active layer of AMOLED backplane. The p-channel poly-Si TFT on SLC region exhibited the field-effect mobility of 173 cm2 /Vs, gate voltage swing of 0.5 V/dec. and threshold voltage of − 4.1 V. The brightness uniformity of AMOLEDs with and without compensation circuits have been compared.
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