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External-cavity semiconductor laser tunable from 1.3 to 1.54 μm for optical communication

2002; Institute of Electrical and Electronics Engineers; Volume: 14; Issue: 1 Linguagem: Inglês

10.1109/68.974142

1941-0174

Ching‐Fuh Lin, Yi-Shin Su, Bing-Ruey Wu,

Semiconductor Quantum Structures and Devices

Using semiconductor optical amplifiers with properly designed nonidentical quantum wells made of InGaAsP-InP materials in the external-cavity configuration, the semiconductor laser is broadly tunable. The tuning range covers from 1.3 μm to 1.54 μm. Without additional filtering techniques, the laser beam emitted from the linear external cavity has the sidemode suppression ratio better than 30 dB. Also, the power ratio of the lasing mode to the total output power is 90%-99%, indicating the dominance of the lasing mode in the amplification process due to the broad gain spectrum.