Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display
2008; Institute of Electrical and Electronics Engineers; Volume: 29; Issue: 12 Linguagem: Inglês
10.1109/led.2008.2006637
ISSN1558-0563
AutoresJang Yeon Kwon, Kyoung Seok Son, Ji Sim Jung, Tae Sang Kim, Myung Kwan Ryu, Kyung‐Bae Park, Byung Wook Yoo, Jung Ho Kim, Young Gu Lee, KeeChan Park, Sangyoon Lee, Jong Min Kim,
Tópico(s)Semiconductor materials and devices
ResumoThe fabrication process and the characteristics of bottom-gate Ga 2 O 3 -In 2 O 3 -ZnO (GIZO) thin-film transistors (TFTs) are reported in detail. Experimental results show that oxygen supply during the deposition of GIZO active layer and silicon oxide passivation layer controls the threshold voltage of the TFT. The field-effect mobility and the threshold voltage of the GIZO TFT fabricated under the optimum process conditions are 2.6 cm 2 /V ldr s and 3.8 V, respectively. A 4-in QVGA active-matrix organic light-emitting diode display driven by the GIZO TFTs without any compensation circuit in the pixel is successfully demonstrated.
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