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Threshold voltage model for deep-submicrometer MOSFETs

1993; Institute of Electrical and Electronics Engineers; Volume: 40; Issue: 1 Linguagem: Inglês

10.1109/16.249429

1557-9646

zhenglin liu, Chenming Hu, Jiawei Huang, T.Y. Chan, M.-C. Jeng, P.K. Ko, Yuhua Cheng,

Silicon Carbide Semiconductor Technologies

The threshold voltage, V/sub th/, of lightly doped drain (LDD) and non-LDD MOSFETs with effective channel lengths down to the deep-submicrometer range has been investigated. Experimental data show that in the very-short-channel-length range, the previously reported exponential dependence on channel length and the linear dependence on drain voltage no longer hold true. A simple quasi-two-dimensional model is used, taking into account the effects of gate oxide thickness, source/drain junction depth, and channel doping, to describe the accelerated V/sub th/ on channel length due to their lower drain-substrate junction built-in potentials. LDD devices also show less V/sub th/ dependence on drain voltage because the LDD region reduces the effective drain voltage. Based on consideration of the short-channel effects, the minimum acceptable length is determined. >