34.2: 2.2 Inch qqVGA AMOLED Drived by Ultra Low Temperature Poly Silicon (ULTPS) TFT Direct Fabricated below 200°C
2006; Wiley; Volume: 37; Issue: 1 Linguagem: Inglês
10.1889/1.2433233
ISSN2168-0159
AutoresJang Yeon Kwon, Ji Sim Jung, Kyung‐Bae Park, Jong Man Kim, Hyuck Lim, Sangyoon Lee, Jong Min Kim, Takashi Noguchi, Ji Ho Hur, Jin Jang,
Tópico(s)Organic Electronics and Photovoltaics
ResumoWe demonstrated 2.2inch qqVGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below 200°C. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma — CVD. In order to reduce stress of plastic, organic film was coated as inter-dielectric and passivation layers. Finally, ULTPS TFT of which mobility is over 20 cm2/Vsec was fabricated on transparent plastic substrate and drived OLED display successfully.
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