Portal de Periódicos da CAPES

Threshold current density in solution-grown GaAs laser diodes

1967; IEEE Photonics Society; Volume: 3; Issue: 7 Linguagem: Inglês

10.1109/jqe.1967.1074588

1558-1713

W. Susaki, T. Oku, T. Sogo,

Advanced Semiconductor Detectors and Materials

Threshold current density of solution-grown GaAs laser diodes with a Fabry-Perot cavity were measured at 77 and 300°K by varying the acceptor concentration in the p region N a . Threshold current density was lower in the series of diodes with larger values of N a than in the series of diodes with smaller values of N a for the diode length between 0.1 and 1 mm. Through these experiments diodes with the threshold current density as low as 3 \times10^{2} A/cm 2 at 77°K and 2.8 \times 10^{4} A/cm 2 at 300°K for the diode length of 1 mm, and as low as 10 3 A/cm 2 at 77°K and 4.5 \times 10^{4} A/cm 2 at 300°K for the diode length of 0.1 mm were obtained.