Incoherent annealing of implanted layers in GaAs
1982; Institute of Electrical and Electronics Engineers; Volume: 3; Issue: 4 Linguagem: Inglês
10.1109/edl.1982.25496
ISSN1558-0563
AutoresDonna E. Davies, P.J. McNally, J.P. Lorenzo, Matthew Julian,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoIncoherent light from filament lamps focused by elliptical mirrors has been used to activate implanted layers in GaAs. 4 × 10 14 Si + cm -2 and 2 × 10 14 Zn + cm -2 implants were annealed with Si 3 N 4 deposited by CVD at 400°C providing a surface protective layer. By taking advantage of the focusing properties of elliptical mirrors, most of the emitted light could be concentrated onto the GaAs to give annealing times × 1 sec. Differential Hall measurements show peak carrier concentrations of 6.5 × 10 18 cm -3 and 50% activation for the n+ layers. The Zn implants were completely activated and doped to ∼ 2 × 10 19 cm -3 . These results, together with the short annealing times, suggest the present approach to be an attractive alternative to both laser and conventional thermal annealing.
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