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Logic devices and circuits based on giant magnetoresistance

1997; IEEE Magnetics Society; Volume: 33; Issue: 6 Linguagem: Inglês

10.1109/20.649887

1941-0069

Jun Shen,

Advancements in Semiconductor Devices and Circuit Design

In this paper, a new paradigm of performing logic operations is proposed. This new approach is based on the submicrometer giant magnetoresistance (GMR) effects. The key enabling features are nonvolatility, high GMR ratio, and control over the switching fields. The possible advantages of the new approach include ultrahigh density (because of the small device size), ultrahigh speed, nonvolatility, and radiation hardness. Key limitations are also identified. Several possible ways to surmount the limitations are also discussed. The proposed approach can, in principle, be applied to other material systems with similar characteristics.