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Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

2007; Institute of Electrical and Electronics Engineers; Volume: 54; Issue: 12 Linguagem: Inglês

10.1109/ted.2007.908874

1557-9646

Andrei Sarua, Hangfeng Ji, K.P. Hilton, D. J. Wallis, Michael J. Uren, T. Martin, Martin Kuball,

Thermal Radiation and Cooling Technologies

The influence of a thermal boundary resistance (TBR) on temperature distribution in ungated AlGaN/GaN field-effect devices was investigated using 3-D micro-Raman thermography. The temperature distribution in operating AlGaN/GaN devices on SiC, sapphire, and Si substrates was used to determine values for the TBR by comparing experimental results to finite-difference thermal simulations. While the measured TBR of about 3.3 x 10 -8 W -1 ldr m 2 ldr K for devices on SiC and Si substrates has a sizeable effect on the self-heating in devices, the TBR of up to 1.2 x 10 -8 W -1 ldr m 2 ldr K plays an insignificant role in devices on sapphire substrates due to the low thermal conductivity of the substrate. The determined effective TBR was found to increase with temperature at the GaN/SiC interface from 3.3 x 10 -8 W -1 ldr m 2 ldr K at 150degC to 6.5 x 3.3 x 10 -8 W -1 ldr m 2 ldr K at 275degC, respectively. The contribution of a low-thermal-conductivity GaN layer at the GaN/substrate interface toward the effective TBR in devices and its temperature dependence are also discussed.