Development of an Si/CdTe semiconductor Compton telescope
2004; SPIE; Volume: 5501; Linguagem: Inglês
10.1117/12.552600
ISSN1996-756X
AutoresT. Tanaka, Takefumi Mitani, Shin Watanabe, K. Nakazawa, Kousuke Oonuki, Goro Sato, Tadayuki Takahashi, Ken‐ichi Tamura, H. Tajima, Hidehito Nakamura, M. Nomachi, Tatsuya Nakamoto, Yasushi Fukazawa,
Tópico(s)Advanced X-ray and CT Imaging
ResumoWe are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor Compton telescope are reported. The Compton telescope consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors, combined with low noise analog LSI, VA32TA. With this detector, we obtained Compton reconstructed images and spectra from line gamma-rays ranging from 81 keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and 356 keV, respectively, and the angular resolution is 9.9° and 5.7° at 122 keV and 356 keV, respectively.
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