Submicron InP-InGaAs single heterojunction bipolar transistors with f/sub T/ of 377 GHz
2003; Institute of Electrical and Electronics Engineers; Volume: 24; Issue: 5 Linguagem: Inglês
10.1109/led.2003.812530
ISSN1558-0563
AutoresW. Hafez, Jie-Wei Lai, M. Feng,
Tópico(s)GaN-based semiconductor devices and materials
ResumoSubmicron InP-InGaAs-based single heterojunction bipolar transistors (SHBTs) are fabricated to achieve record-breaking speed performance using an aggressively scaled epitaxial structure coupled with a submicron emitter process. SHBTs with dimensions of 0.35 ×16 μm have demonstrated a maximum current gain cutoff frequency f T of 377 GHz with a simultaneous maximum power gain cutoff frequency f max of 230 GHz at the current density Jc of 650 kA/cm 2 . Typical BV/sub CEO/ values exceed 3.7 V.
Referência(s)