Deep-UV generation by frequency quadrupling of a high-power GaAlAs semiconductor laser
1995; Optica Publishing Group; Volume: 20; Issue: 10 Linguagem: Inglês
10.1364/ol.20.001145
ISSN1539-4794
AutoresLew Goldberg, Dahv A. V. Kliner,
Tópico(s)Luminescence Properties of Advanced Materials
ResumoTunable UV radiation near 215 nm was produced by frequency quadrupling the 860-nm emission of a mode-locked external-cavity compound semiconductor laser containing a tapered GaAlAs amplifier. A KNbO3 crystal generated the 430-nm second harmonic, which was doubled by a β-BaB2O4 crystal, producing tunable UV radiation with as much as 15 μW of average power.
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