Portal de Periódicos da CAPES

Total ionizing dose effects in MOS oxides and devices

2003; Institute of Electrical and Electronics Engineers; Volume: 50; Issue: 3 Linguagem: Inglês

10.1109/tns.2003.812927

1558-1578

Timothy R. Oldham, F. B. McLean,

Advancements in Semiconductor Devices and Circuit Design

This paper reviews the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation. Device and circuit effects are also discussed briefly.