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Drift velocity saturation in MOS transistors

1970; Institute of Electrical and Electronics Engineers; Volume: 17; Issue: 6 Linguagem: Inglês

10.1109/t-ed.1970.17014

1557-9646

G. Baum, H. Beneking,

Analog and Mixed-Signal Circuit Design

It is shown that the drift velocity saturation of the current carriers in the channel of a MOSFET iS an important factor in the analysis of the electrical behavior of such devices. The theory presented here, which includes this effect, shows improved agreement with measured output characteristics.