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Selective etching of AlGaAs/GaAs structures using the solutions of citric acid/H2O2 and de-ionized H2O/buffered oxide etch

1998; American Institute of Physics; Volume: 16; Issue: 2 Linguagem: Inglês

10.1116/1.589862

1520-8567

Jong-Hee Kim, Dae Ho Lim, Gye Mo Yang,

Photonic and Optical Devices

Etching results using the solution system of citric acid/H2O2 and de-ionized H2O/buffered oxide etch are shown to provide good selective wet etching of AlGaAs/GaAs structures. For AlxGa1−xAs (x<0.5) layers the selective characteristics of each Al composition strongly depend on the volume ratio of the citric acid/H2O2 solution. The turning volume ratio of the solution, at which etching starts, sensitively depends on Al composition. Additionally, the etch rate of AlyGa1−yAs (y>0.7) quickly decreases with decreasing Al composition in de-ionized H2O/buffered oxide etch solution, providing a high degree of etching selectivity. These simple selective etching processes have been applied to define AlAs/GaAs distributed Bragg reflector mesas in a vertical-cavity surface-emitting laser structure.