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Small-signal and noise model extraction technique for heterojunction bipolar transistor at microwave frequencies

1995; IEEE Microwave Theory and Techniques Society; Volume: 43; Issue: 2 Linguagem: Inglês

10.1109/22.348087

1557-9670

J.P. Roux, L. Escotte, R. Plana, J. Graffeuil, S.L. Delage, H. Blanck,

Semiconductor Quantum Structures and Devices

The increasing use of Heterojunction Bipolar Transistors (HBT's) in microwave analog circuits requires a valid description of these devices by means of an equivalent circuit including noise sources in an extended bias and frequency range. This paper describes a technique to extract the elements of the equivalent circuit from simultaneous noise and S-parameter measurements. Additionally, the conventional high frequency bipolar junction transistor (BJT) noise model is shown to work well with HBT's. Recent results obtained from GaInP/GaAs HBT's are reported. >