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Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors

2013; American Institute of Physics; Volume: 102; Issue: 8 Linguagem: Inglês

10.1063/1.4793535

1520-8842

Jayapal Raja, Kyungsoo Jang, Nagarajan Balaji, Woo-Jin Choi, Thanh Thuy Trinh, Junsin Yi,

Silicon Nanostructures and Photoluminescence

Stability of negative bias temperature stress (NBTS) of nitrogen doped amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) is investigated. Undoped a-IGZO TFT stressed at 333 K exhibit a larger negative ΔVTH (−3.21 V) with an unpredictable sub-threshold swing (SS) of hump shaped transfer curve due to the creation of meta-stable traps. Defects related hump formation has disappeared with small ΔVTH (−1.13 V) and ΔSS (0.018 V/dec) in nitrogen doped a-IGZO TFT. It is observed that nitrogen doping enhances device stability by well controlled oxygen vacancy and trap sites in channel and channel/dielectric interface.