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Substantial photo-response of InGaN p–i–n homojunction solar cells

2009; IOP Publishing; Volume: 24; Issue: 5 Linguagem: Inglês

10.1088/0268-1242/24/5/055009

1361-6641

Shengwei Zeng, B P Zhang, Jianwu Sun, Jiafa Cai, Chaoxu Chen, Jiacheng Yu,

solar cell performance optimization

InGaN p–i–n homojunction structures were grown by metal-organic chemical vapor deposition, and solar cells with different p-contact schemes were fabricated. X-ray diffraction measurements demonstrated that the epitaxial layers have a high crystalline quality. Solar cells with semitransparent p-contact exhibited a fill factor (FF) of 69.4%, an open-circuit voltage (Voc) of 2.24 V and an external quantum efficiency (EQE) of 41.0%. On the other hand, devices with grid p-contact showed the corresponding values of 57.6%, 2.36 V, 47.9% and a higher power density. These results indicate that significant photo-responses can be achieved in InGaN p–i–n solar cells.